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| PNP Silicon Transistors SMBT 5086 SMBT 5087 For AF input stages and driver applications q High current gain q Low collector-emitter saturation voltage q Low noise between 30 Hz and 15 kHz q Type SMBT 5086 SMBT 5087 Marking s2P s2Q Ordering Code (tape and reel) Q62702-M0002 Q68000-A8319 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS = 71 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS Symbol VCE0 VCB0 VEB0 IC Ptot Tj Tstg Values 50 50 3 50 330 150 - 65 ... + 150 Unit V mA mW C 310 240 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SMBT 5086 SMBT 5087 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA Collector-base breakdown voltage IC = 100 A Emitter-base breakdown voltage, IE = 10 A Collector-base cutoff current VCB = 10 V, IE = 0 VCB = 35 V, IE = 0 VCB = 35 V, IE = 0, TA = 150 C DC current gain IC = 100 A, VCE = 5 V IC = 1 mA, VCE = 5 V IC = 10 mA, VCE = 5 V SMBT 5086 SMBT 5087 SMBT 5086 SMBT 5087 SMBT 5086 SMBT 5087 VCEsat VBEsat V(BR)CE0 V(BR)CB0 V(BR)EB0 ICB0 - - - hFE 150 250 150 250 150 250 - - - - - - - - - - 500 800 - - - - 0.3 0.85 V - - - 10 50 20 nA nA A Values typ. max. Unit 50 50 3 - - - - - - V - Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA Base-emitter saturation voltage1) IC = 10 mA, IB = 1 mA AC characteristics Transition frequency IC = 0.5 mA, VCE = 5 V, f = 100 MHz Output capacitance, VCB = 5 V, f = 1 MHz Small-signal current gain IC = 1 mA, VCE = 5 V, f = 1 kHz IC = 1 mA, VCE = 5 V, f = 1 kHz Noise figure IC = 100 A, VCE = 5 V, f = 1 kHz, RS = 3 k SMBT 5086 SMBT 5087 fT Cobo hfe 40 - 150 250 - - - - - 4 600 900 MHz pF - NF - - - - - - - - 3 2 3 2 dB dB dB dB SMBT 5086 SMBT 5087 IC = 2 mA, VCE = 5 V, f = 10 Hz to 15 kHz, RS = 10 k SMBT 5086 SMBT 5087 1) Pulse test conditions: t 300 s, D 2 %. Semiconductor Group 2 SMBT 5086 SMBT 5087 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector-base capacitance CCB0 = f (VCB0) Emitter-base capacitance CEB0 = f (VEB0) Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 5 V Semiconductor Group 3 SMBT 5086 SMBT 5087 Base-emitter saturation voltage IC = f (VBE sat), hFE = 40 Collector-emitter saturation voltage IC = f (VCE sat), hFE = 40 Collector current IC = f (VBE) VCE = 1 V DC current gain hFE = f (IC) VCE = 1 V Semiconductor Group 4 SMBT 5086 SMBT 5087 Collector cutoff current ICB0 = f (TA) Noise figure NF = f (VCE) IC = 0.2 mA, RS = 2 k, f = 1 kHz Noise figure NF = f (IC) IC = 0.2 mA, RS = 2 k,VCE = 5 V Noise figure NF = f (IC) VCE = 5 V, f = 120 kHz Semiconductor Group 5 SMBT 5086 SMBT 5087 Noise figure NF = f (IC) VCE = 5 V, f = 1 kHz Noise figure NF = f (IC) VCE = 5 V, f = 10 kHz Semiconductor Group 6 |
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